Application of channeling to surface science = Application de la canalisation à la science des surfacesFELDMAN, L. C.Physica scripta (Print). 1983, Vol 28, Num 3, pp 303-307, issn 0031-8949Article

High energy ion scatteringFELDMAN, L. C.Surface science. 1994, Vol 299-300, Num 1-3, pp 233-245, issn 0039-6028Article

Oscillatory relaxation of the Ag(110) surface = Relaxation oscillatoire de la surface Ag(110)KUK, Y; FELDMAN, L. C.Physical review. B, Condensed matter. 1984, Vol 30, Num 10, pp 5811-5816, issn 0163-1829Article

Silicon crystal distortions at the Si(100)-SiO₂ interface from analysis of ion-scatteringBONGIORNO, Angelo; PASQUARELLO, Alfredo; HYBERTSEN, Mark S et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 197-200, issn 0167-9317, 4 p.Conference Paper

Point defects in Si thin films grown by molecular beam epitaxyGOSSMAN, H.-J; ASOKA-KUMAR, P; LEUNG, T. C et al.Applied physics letters. 1992, Vol 61, Num 5, pp 540-542, issn 0003-6951Article

Giant enhancement of luminescence intensity in Er-doped Si/SiO₂ resonant cavitiesSCHUBERT, E. F; VREDENBERG, A. M; HUNT, N. E. J et al.Applied physics letters. 1992, Vol 61, Num 12, pp 1381-1383, issn 0003-6951Article

Quantitative analysis of strain relaxation in Ge_xSi_1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in Ge_xSi_1-xalloysHULL, R; BEAN, J. C; PETICOLAS, L. J et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2802-2804, issn 0003-6951Article

Ordered monolayer structures of boron in Si(111) and Si(100)HEADRICK, R. L; WEIR, B. E; LEVI, A. F. J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 4, pp 2269-2272, issn 0734-2101Article

Structure determination of the Si(111):B (√3 × √3)R30° surface; subsurface substitutional dopingHEADRICK, R. L; ROBINSON, I. K; VLIEG, E et al.Physical review letters. 1989, Vol 63, Num 12, pp 1253-1256, issn 0031-9007, 4 p.Article

Initial stages of epitaxial growth: gallium arsenide on siliconZINKE-ALLMANG, M; FELDMAN, L. C; NAKAHARA, S et al.Applied physics letters. 1988, Vol 52, Num 2, pp 144-146, issn 0003-6951Article

Structurally induced optical transitions in Ge-Si superlatticesPEARSALL, T. P; BEVK, J; FELDMAN, L. C et al.Physical review letters. 1987, Vol 58, Num 7, pp 729-732, issn 0031-9007Article

Ge-Si layered structures : artificial crystals and complex cell ordered superlatticesBEVK, J; MANNAERTS, J. P; FELDMAN, L. C et al.Applied physics letters. 1986, Vol 49, Num 5, pp 286-288, issn 0003-6951Article

Observation of (5×5) surface reconstruction on pure silicon and its stability against native-oxide formationOURMAZD, A; TAYLOR, D. W; BEVK, J et al.Physical review letters. 1986, Vol 57, Num 11, pp 1332-1335, issn 0031-9007Article

Observation of a (5×5) LEED pattern from Ge_xSi_1-x(111) alloysGOSSMANN, H.-J; BEAN, J. C; FELDMAN, L. C et al.Surface science. 1984, Vol 138, Num 2-3, pp L175-L180, issn 0039-6028Article

Pseudomorphic growth of Ge_xSi_1-x on silicon by molecular beam epitaxyBEAN, J. C; SHENG, T. T; FELDMAN, L. C et al.Applied physics letters. 1984, Vol 44, Num 1, pp 102-104, issn 0003-6951Article

Phosphorous passivation of the SiO₂/4H-SiC interfaceSHARMA, Y. K; AHYI, A. C; ISSACS-SMITH, T et al.Solid-state electronics. 2012, Vol 68, pp 103-107, issn 0038-1101, 5 p.Article

Nitridation of the SiO₂/4H-SiC interface studied by surface-enhanced Raman spectroscopyCHOI, S. H; WANG, D; WILLIAMS, J. R et al.Applied surface science. 2007, Vol 253, Num 12, pp 5411-5414, issn 0169-4332, 4 p.Article

Desorption of H from Si(111) by resonant excitation of the Si-H vibrational stretch modeZHIHENG LIU; FELDMAN, L. C; TOLK, N. H et al.Science (Washington, D.C.). 2006, Vol 312, Num 5776, pp 1024-1026, issn 0036-8075, 3 p.Article

Structural basis for near unity quantum yield core/shell nanostructuresMCBRIDE, James; TREADWAY, Joe; FELDMAN, L. C et al.Nano letters (Print). 2006, Vol 6, Num 7, pp 1496-1501, issn 1530-6984, 6 p.Article

Rapid tarnishing of silver nanoparticles in ambient laboratory airMCMAHON, M. D; LOPEZ, R; MEYER, H. M et al.Applied physics. B, Lasers and optics (Print). 2005, Vol 80, Num 7, pp 915-921, issn 0946-2171, 7 p.Article

4H-SiC oxynitridation for generation of insulating layers : Silicon carbideCHUNG, G. Y; WILLIAMS, J. R; MCDONALD, K et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 17, pp S1857-S1871, issn 0953-8984Article

Electron microscopy of the ordered boron 2×1 structure buried in crystalline siliconWEIR, B. E; EAGLESHAN, D. J; FELDMAN, L. C et al.Applied surface science. 1995, Vol 84, Num 4, pp 413-418, issn 0169-4332Article

Clustering on surfacesZINKE-ALLMANG, M; FELDMAN, L. C; GRABOW, M. H et al.Surface science reports. 1992, Vol 16, Num 8, pp 377-463, issn 0167-5729, 36 p.Article

Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracksKALISH, R; KRAMER, L.-Y; MERZ, J. L et al.Applied physics letters. 1992, Vol 61, Num 21, pp 2589-2591, issn 0003-6951Article

Buried, ordered structures : boron in Si(111) and Si(100)HEADRICK, R. L; WEIR, B. E; LEVI, A. F. J et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 838-842, issn 0022-0248Conference Paper